国家/地区 | China(5) Korea(4) Singapore(2) |
关键词 |
GRAPHENE(13)![]() |
出版物 | IEEE ELECTRON DEVIC.(2) IEEE TRANSACTIONS O.(2) |
出版时间 | 2013(4) 2016(4) |
机构 | SUNGKYUNKWAN.(3) NANYANG TECH.(2) |
作者 |
YU HY(13)![]() |
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
ACS APPLIED MATERIALS INTERFACES
ZHONG X, YU HY, WANG XD, LIU L, JIANG Y, WANG L, ZHUANG GL, CHU YQ, LI XN, WANG JG
IEEE TRANSACTIONS ON ELECTRON DEVICES
LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE
YU HY, XU MQ, YU SH, ZHAO GC
ORGANIC ELECTRONICS
LEE IY, PARK HY, PARK JH, LEE J, JUNG WS, YU HY, KIM SW, KIM GH, PARK JH
CRYSTALS
LIU WJ, WEI J, SUN XW, YU HY
IEEE ELECTRON DEVICE LETTERS
LIU WJ, YU HY, XU SH, ZHANG Q, ZOU X, WANG JL, PEY KL, WEI J, ZHU HL, LI MF
NANOSCALE RESEARCH LETTERS
LEE BJ, YU HY, JEONG GH
NANOTOXICOLOGY
LIU S, JIANG W, WU B, YU J, YU HY, ZHANG XX, TORRESDUARTE C, CHERR GN
ADVANCED MATERIALS
PARK HY, JUNG WS, KANG DH, JEON J, YOO G, PARK Y, LEE J, JANG YH, LEE J, PARK S, YU HY, SHIN B, LEE S, PARK JH