国家/地区 China（3）
关键词
出版物 PHYSICAL REVIEW B（4）
出版时间
机构 HONG KONG UN.（2）
作者 ZHANG B（4）

Negative correlation between charge carrier density and mobility fluctuations in graphene

PHYSICAL REVIEW B

LU JM, PAN J, YEH SS, ZHANG HJ, ZHENG Y, CHEN QH, WANG Z, ZHANG B, LIN JJ, SHENG P

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

MATHIEU C, BARRETT N, RAULT J, MI YY, ZHANG B, DE HEER WA, BERGER C, CONRAD EH, RENAULT O

Spatial variation of charge carrier density in graphene under a large bias current

PHYSICAL REVIEW B

PAN J, ZHANG HJ, ZHENG Y, ZHANG B, ZHANG T, SHENG P

Correlation hard gap in antidot graphene

PHYSICAL REVIEW B

PAN J, YEH SSA, ZHANG HJ, REES DG, ZHANG T, ZHANG B, LIN JO, SHENG P