国家/地区 China（5）
关键词
出版物
出版时间 2014（2）
机构 NATL UNIV DEF TECHNOL（5）
作者 ZHANG S（5）

Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-kappa Al(2)O(3)Dielectrics on Graphene

CHINESE PHYSICS LETTERS

YANG H, CHEN W, LI MY, XIONG F, WANG G, ZHANG S, DENG CY, PENG G, QIN SQ

Current self-amplification effect of graphene-based transistor in high-field transport

CARBON

CHEN W, QIN SQ, ZHANG XA, ZHANG S, FANG JY, WANG G, WANG CC, WANG L, CHANG SL

Current induced doping in graphene-based transistor with asymmetrical contact barriers

APPLIED PHYSICS LETTERS

CHEN W, QIN SQ, ZHANG XA, ZHANG S, FANG JY, WANG G, WANG CC, WANG L, CHANG SL

Tunable photoresponse with small drain voltage in few-layer graphene-WSe2 heterostructures

PHYSICS LETTERS A

LUO W, QIN SQ, LONG MS, LIU EF, FU YJ, ZHOU W, MIAO F, ZHANG S, ZHANG RY, ZHANG XA

In Situ Fabrication and Characterization of Graphene Electronic Device Based on Dual Beam System

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

CHEN W, QIN SQ, ZHANG XA, FANG JY, WANG G, ZHANG S, WANG CC, WANG L, CHANG SL