国家/地区 India（2）
关键词 ACTIVATION ENERGY（2）
出版物
出版时间
机构 INDIAN INST TECHNOL（2）
作者

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

IEEE ELECTRON DEVICE LETTERS

MISHRA A, JANARDANAN A, KHARE M, KALITA H, KOTTANTHARAYIL A

Annealing induced electrical conduction and band gap variation in thermally reduced graphene oxide films with different sp(2)/sp(3) fraction

APPLIED SURFACE SCIENCE

SINGH M, YADAV A, KUMAR S, AGARWAL P