国家/地区 Japan（4） China（3） Iran（2）
关键词 ANDERSON LOCALIZATION（12）
出版物
出版时间 2014（2） 2022（2）
机构 TOKYO INST T.（2）
作者 ANDO T（2） ARDAKANI AG（2）

Critical level statistics for weakly disordered graphene

JOURNAL OF PHYSICSCONDENSED MATTER

AMANATIDIS E, KLEFTOGIANNIS I, KATSANOS DE, EVANGELOU SN

Conductivity of graphene with resonant adsorbates: beyond the nearest neighbor hopping model

ADVANCES IN NATURAL SCIENCESNANOSCIENCE NANOTECHNOLOGY

DE LAISSARDIERE GT, MAYOU D

Numerical study of the superconductor-insulator transition in double-layer graphene driven by disorder

ACTA PHYSICA SINICA

HE L, SONG Y

Suppression of Anderson localization in a graphene sheet applied by a random voltage pattern

PHYSICS LETTERS A

JIANG HT, ZHANG JF, WANG ZL, LI YH, CHEN H

Impurities in graphene

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

ZHANG YY, HU JP, BERNEVIG BA, WANG XR, XIE XC, LIU WM

Quantum Hall effect in graphene

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

KOSHINO M, ANDO T

Anderson localization in a graphene sheet

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

SUZUURA H, ANDO T

Optimization of thermoelectric power factor and deviation from Mott's formula of edge-disordered semiconducting graphene nanoribbons

SYNTHETIC METALS

IZAWA T, TAKASHIMA K, KONABE S, YAMAMOTO T

Theoretical and experimental investigation of the metal-insulator transition in disordered anti-dot graphene

NEW JOURNAL OF PHYSICS

ZHANG T, ZHANG HJ, PAN J, SHENG P

Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime

CARBON

IWASAKI T, NAKAMURA S, AGBONLAHOR OG, MURUGANATHAN M, AKABORI M, MORITA Y, MORIYAMA S, OGAWA S, WAKAYAMA Y, MIZUTA H, NAKAHARAI S