国家/地区 France（4）
关键词 ANNEALING（4）
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Reversibility of defect formation during oxygen-assisted electron-beam-induced etching of graphene

JOURNAL OF RAMAN SPECTROSCOPY

PILLET G, FREIRESOLER V, EROLES MN, BACSA W, DUJARDIN E, PUECH P

Study of annealing temperature influence on the performance of top gated graphene/SiC transistors

SOLIDSTATE ELECTRONICS

CLAVEL M, POIROUX T, MOUIS M, BECERRA L, THOMASSIN JL, ZENASNI A, LAPERTOT G, ROUCHON D, LAFOND D, FAYNOT O

Surface morphology and characterization of thin graphene films on SiC vicinal substrate

PHYSICAL REVIEW B

PENUELAS J, OUERGHI A, LUCOT D, DAVID C, GIERAK J, ESTRADESZWARCKOPF H, ANDREAZZAVIGNOLLE C

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

DAGHER R, MATTA S, PARRET R, PAILLET M, JOUAULT B, NGUYEN L, PORTAIL M, ZIELINSKI M, CHASSAGNE T, TANAKA S, BRAULT J, CORDIER Y, MICHON A