国家/地区 China（4） India（3） Iran（2） Korea（2）
关键词 BAND GAP OPENING（16）
出版物 ACS NANO（4） ACS APPLIED MATERIA.（2） NANO LETTERS（2）
出版时间 2011（5） 2017（2） 2019（2） 2021（2）
机构 PEKING UNIV（2）
作者 LIU ZF（2） PENG HL（2） YAN K（2） ZHOU Y（2）

Opening the Band Gap of Graphene via Fluorination for High-Performance Dual-Mode Photodetector Application

ACS APPLIED MATERIALS INTERFACES

XU JY, YU JS, LIAO JH, YANG XB, WU CY, WANG Y, WANG L, XIE C, LUO LB

Electronic structure of the Au-intercalated graphene/Ni(111) surface

CURRENT APPLIED PHYSICS

PARK Y, JUNG D, HWANG HN, HWANG CC

Halogenated Graphenes: Rapidly Growing Family of Graphene Derivatives

ACS NANO

KARLICKY F, DATTA KKR, OTYEPKA M, ZBORIL R

Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping

ACS NANO

ZHANG WJ, LIN CT, LIU KK, TITE T, SU CY, CHANG CH, LEE YH, CHU CW, WEI KH, KUO JL, LI LJ

Graphene Synthesis and Band Gap Opening

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

JARIWALA D, SRIVASTAVA A, AJAYAN PM

Photochemical Chlorination of Graphene

ACS NANO

LI B, ZHOU L, WU D, PENG HL, YAN K, ZHOU Y, LIU ZF

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

ACS NANO

LEE SH, CHUNG HJ, HEO J, YANG H, SHIN J, CHUNG UI, SEO S

Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition

NANO LETTERS

YAN K, PENG HL, ZHOU Y, LI H, LIU ZF

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

NANO LETTERS

LEE S, LEE K, ZHONG ZH

Electronic structure tuning and band gap opening of nitrogen and boron doped holey graphene flake: The role of single/dual doping

MATERIALS CHEMISTRY PHYSICS

OMIDVAR A