国家/地区 Japan（9）
关键词 DOPING（9）
出版物
出版时间
机构 TOHOKU UNIV（2）
作者 VISHWAKARMA .（2）

Heteroatom doping of two-dimensional materials: From graphene to chalcogenides

NANO TODAY

ZHU HY, GAN X, MCCREARY A, LV RT, LIN Z, TERRONES M

N-Doped Graphene-SnO2 Sandwich Paper for High-Performance Lithium-Ion Batteries

ADVANCED FUNCTIONAL MATERIALS

WANG X, CAO XQ, BOURGEOIS L, GUAN H, CHEN SM, ZHONG YT, TANG DM, LI HQ, ZHAI TY, LI L, BANDO Y, GOLBERG D

First-principles calculation of the electronic properties of graphene clusters doped with nitrogen and boron: Analysis of catalytic activity for the oxygen reduction reaction

PHYSICAL REVIEW B

HUANG SF, TERAKURA K, OZAKI T, IKEDA T, BOERO M, OSHIMA M, OZAKI J, MIYATA S

Magnetic Properties of Mn Doped Armchair Graphene Nanoribbon

MATERIALS TRANSACTIONS

GORJIZADEH N, KAWAZOE Y

First-principles theoretical investigation of graphene layers for sensor applications: A review

NANOMATERIALS NANOTECHNOLOGY

FUJIMOTO Y

CuNi binary alloy catalyst for growth of nitrogen-doped graphene by low pressure chemical vapor deposition

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

PAPON R, SHARMA KP, MAHAYAVANSHI RD, SHARMA S, VISHWAKARMA R, ROSMI MS, KAWAHARA T, CLINE J, KALITA G, TANEMURA M

Selective in-plane nitrogen doping of graphene by an energy-controlled neutral beam

NANOTECHNOLOGY

OKADA T, SAMUKAWA S

Laser-assisted doping of graphene for transparent conducting electrodes

MATERIALS CHEMISTRY PHYSICS

ABUELWAFA AA, ZHU RC, VISHWAKARMA R, ELNOBI S, ADHIKARI S, SOGA T, UMENO M

Advances in multilayer graphene processes for metallization and high-frequency devices

JAPANESE JOURNAL OF APPLIED PHYSICS

UENO K