国家/地区 India（5） China（2） Usa（2）
关键词 ELECTRON DENSITY（14）
出版物 PHYSICAL REVIEW B（3） APPLIED PHYSICS LET.（2） MOLECULAR PHYSICS（2）
出版时间 2009（3） 2012（3） 2015（2） 2020（2）
机构 BANARAS HIND.（4）
作者 MISHRA PC（4） YADAV A（4）

Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

OE T, RIGOSI AF, KRUSKOPF M, WU BY, LEE HY, YANG YF, ELMQUIST RE, KANEKO NH, JARRETT DG

Energy levels of graphene magnetic circular quantum dot

MATERIALS RESEARCH EXPRESS

BELOUAD A, LEMAALEM B, JELLAL A, BAHLOULI H

Dimers and trimers of polycyclic aromatic hydrocarbons as models of graphene bilayers and trilayers: enhanced electron density at the edges

MOLECULAR PHYSICS

YADAV A, MISHRA PC

Polycyclic aromatic hydrocarbons as finite size models of graphene and graphene nanoribbons: Enhanced electron density edge effect

CHEMICAL PHYSICS

MISHRA PC, YADAV A

Unintentional doping induced splitting of G peak in bilayer graphene (vol 99, 233110, 2011)

APPLIED PHYSICS LETTERS

LIN SS, CHEN BG, PAN CT, HU S, TIAN P, TONG LM

Enhanced Electron Density Edge Effect in Polycyclic Aromatic Hydrocarbons as Finite Size Models of Graphene and Graphene Nanoribbons

NATIONAL ACADEMY SCIENCE LETTERSINDIA

MISHRA PC, YADAV A

Charge transfer between epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

KOPYLOV S, TZALENCHUK A, KUBATKIN S, FAL KO VI

Transition from ballistic to diffusive behavior of graphene ribbons in the presence of warping and charged impurities

PHYSICAL REVIEW B

KLOS JW, SHYLAU AA, ZOZOULENKO IV, XU HY, HEINZEL T

Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene

PHYSICAL REVIEW B

RANA F, GEORGE PA, STRAIT JH, DAWLATY J, SHIVARAMAN S, CHANDRASHEKHAR M, SPENCER MG

Dependence of resistivity on electron density and temperature in graphene

PHYSICAL REVIEW B

XU W, PEETERS FM, LU TC