国家/地区 Usa（5）
关键词 EPITAXIAL GRAPHENE（5）
出版物 ACS NANO（2） NANO LETTERS（2）
出版时间 2011（2）
机构 PENN STATE U.（4）
作者 ROBINSON JA（5）

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HOLLANDER MJ, AGRAWAL A, BRESNEHAN MS, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, DATTA S, ROBINSON JA

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation

NANO LETTERS

ROBINSON JA, HOLLANDER M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA

Toward a Mechanistic Understanding of the Formation of 2D-GaNX in Epitaxial Graphene

ACS NANO

BANSAL A, NAYIR N, WANG K, RONDOMANSKI P, SUBRAMANIAN S, KUMARI S, ROBINSON JA, DUIN ACTV, REDWING JM