国家/地区 China（3）
关键词 EPITAXIAL GROWTH（3）
出版物 MATERIALS LETTERS（3）
出版时间
机构
作者

Morphology and structure of epitaxial graphene grown on 6H-SiC (0001) substrates by modified argon-assisted epitaxial method

MATERIALS LETTERS

HAO X, CHEN YF, WANG ZG, LIU JB, QI F

High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching

MATERIALS LETTERS

ZHANG FS, CHEN XF, YU CC, XU XG, HU XB, QIN X, LI Q, ZHAO X, YU P, WANG RQ

Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method

MATERIALS LETTERS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG YM