国家/地区 Germany（5） Usa（3） Romania（2）
关键词 FIELD EFFECT（18）
出版物 2D MATERIALS（2） NANO LETTERS（2）
出版时间 2014（2） 2015（2） 2018（2） 2019（2）
机构 TECH UNIV CH.（2） UNIV BUCHARE.（2）
作者 DRAGOMAN D（2） MANOLESCU A（2） MITRAN TL（2） NEMNES GA（2）
SEYLLER T（2） WEHRFRITZ P（2）

Field Effect and Local Gating in Nitrogen-Terminated Nanopores (NtNP) and Nanogaps (NtNG) in Graphene

CHEMPHYSCHEM

DJURISIC I, DRAZIC MS, TOMOVIC AZ, SPASENOVIC M, SLJIVANCANIN Z, JOVANOVIC VP, ZIKIC R

High On-Off Ratio Graphene Switch via Electrical Double Layer Gating

IEEE ACCESS

HAYASHI CK, GARMIRE DG, YAMAUCHI TJ, TORRES CM, ORDONEZ RC

Demonstrating the concepts of sheet resistance, field effect, and mobility of a semiconductor using graphene field effect transistors

EUROPEAN JOURNAL OF PHYSICS

STECHER K, HUANG SHY, ESCORCIO R, LUICANMAYER A

Electric and thermoelectric properties of graphene bilayers with extrinsic impurities under applied electric field

PHYSICA BCONDENSED MATTER

NEMNES GA, MITRAN TL, MANOLESCU A, DRAGOMAN D

Electric field effect in boron and nitrogen doped graphene bilayers

COMPUTATIONAL MATERIALS SCIENCE

NEMNES GA, MITRAN TL, MANOLESCU A, DRAGOMAN D

Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

ELECTRONIC MATERIALS LETTERS

MELE D, MEHDHBI S, FADIL D, WEI W, OUERGHI A, LEPILLIET S, HAPPY H, PALLECCHI E

The Hall coefficient: a tool for characterizing graphene field effect transistors

2D MATERIALS

WEHRFRITZ P, SEYLLER T

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Low temperature crystallization of diamond-like carbon films to graphene

APPLIED SURFACE SCIENCE

TINCHEV S, VALCHEVA E, PETROVA E

Observation of Tunneling Current in Semiconducting Graphene p-n Junctions

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

MIYAZAKI H, LEE MV, LI SL, HIURA H, KANDA A, TSUKAGOSHI K