国家/地区 Germany（7）
关键词 FIELD EFFECT TRANSISTOR（7）
出版物
出版时间 2020（2）
机构 AMO GMBH（3） RHEIN WESTFA.（3）
作者 KURZ H（3） SZAFRANEK BN（3） LEMME MC（2） NEUMAIER D（2）
SCHALL D（2）

Graphene-Based Frequency-Conversion Mixers for High-Frequency Applications

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

HAMED A, SAEED M, NEGRA R

Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors

CHEMISTRYA EUROPEAN JOURNAL

TANG Z, GEORGE A, WINTER A, KAISER D, NEUMANN C, WEIMANN T, TURCHANIN A

Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors

NANO LETTERS

SZAFRANEK BN, FIORI G, SCHALL D, NEUMAIER D, KURZ H

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

APPLIED PHYSICS LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H

Electronic spin transport in graphene field-effect transistors

PHYSICAL REVIEW B

POPINCIUC M, JOZSA C, ZOMER PJ, TOMBROS N, VELIGURA A, JONKMAN HT, VAN WEES BJ

Mobility in graphene double gate field effect transistors

SOLIDSTATE ELECTRONICS

LEMME MC, ECHTERMEYER TJ, BAUS M, SZAFRANEK BN, BOLTEN J, SCHMIDT M, WAHLBRINK T, KURZ H

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

ANNALEN DER PHYSIK

PANDEY H, AGUIRREMORALES JD, KATARIA S, FREGONESE S, PASSI V, IANNAZZO M, ZIMMER T, ALARCON E, LEMME MC