国家/地区 Usa（4） Japan（2）
关键词 FIELD EFFECT TRANSISTOR（13）
出版物 APPLIED PHYSICS LET.（7） PHYSICAL REVIEW B（4） JOURNAL OF APPLIED .（2）
出版时间 2009（13）
机构 UNIV AIZU（2）
作者 RYZHII M（2） RYZHII V（2）

Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

APPLIED PHYSICS LETTERS

PARK N, KIM BK, LEE JO, KIM JJ

Graphene field effect transistors with parylene gate dielectric

APPLIED PHYSICS LETTERS

SABRI SS, LEVESQUE PL, AGUIRRE CM, GUILLEMETTE J, MARTEL R, SZKOPEK T

Electronic spin transport in graphene field-effect transistors

PHYSICAL REVIEW B

POPINCIUC M, JOZSA C, ZOMER PJ, TOMBROS N, VELIGURA A, JONKMAN HT, VAN WEES BJ

Design of graphene electronic devices using nanoribbons of different widths

APPLIED PHYSICS LETTERS

NAUMIS GG, TERRONES M, TERRONES H, GAGGEROSAGER LM

Ultralow noise field-effect transistor from multilayer graphene

APPLIED PHYSICS LETTERS

PAL AN, GHOSH A

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Integrated complementary graphene inverter

APPLIED PHYSICS LETTERS

TRAVERSI F, RUSSO V, SORDAN R

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

Graphene bilayer field-effect phototransistor for terahertz and infrared detection

PHYSICAL REVIEW B

RYZHII V, RYZHII M

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N