国家/地区 France（5）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物
出版时间 2017（2）
机构
作者 BOUBAKER A（2） HAFSI B（2） KALBOUSSI A（2） LMIMOUNI K（2）

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

SMALL

DAYEN JF, MAHMOOD A, GOLUBEV DS, ROCHJEUNE I, SALLES P, DUJARDIN E

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, WEI W, HAPPY H, MANEUX C, ZIMMER T

N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate

ORGANIC ELECTRONICS

HAFSI B, BOUBAKER A, GUERIN D, LENFANT S, KALBOUSSI A, LMIMOUNI K

TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

HAFSI B, BOUBAKER A, ISMAIL N, KALBOUSSI A, LMIMOUNI K

Nitrogen-Doped Carbon Quantum Dots on Graphene for Field-Effect Transistor Optoelectronic Memories

ADVANCED ELECTRONIC MATERIALS

CHAUDHARY M, XIN CH, HU ZL, ZHANG DJ, RADTKE G, XU XZ, BILLOT L, TRIPONCANSELIET C, CHEN ZY