国家/地区 Korea（5） China（2）
关键词 FIELDEFFECT TRANSISTOR（10）
出版物 ADVANCED MATERIALS（10）
出版时间 2012（5）
机构
作者 KIM J（2） LEE S（2）

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

ADVANCED MATERIALS

CHEE SS, SEO D, KIM H, JANG H, LEE S, MOON SP, LEE KH, KIM SW, CHOI H, HAM MH

Solution Adsorption Formation of a pi-Conjugated Polymer/Graphene Composite for High-Performance Field-Effect Transistors

ADVANCED MATERIALS

LIU Y, HAO W, YAO HY, LI SZ, WU YC, ZHU J, JIANG L

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE

Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template

ADVANCED MATERIALS

ZENG ZY, HUANG X, YIN ZY, LI H, CHEN Y, LI H, ZHANG Q, MA J, BOEY F, ZHANG H

Quantitative Analysis of the Role of the First Layer in p- and n-Type Organic Field-Effect Transistors with Graphene Electrodes

ADVANCED MATERIALS

WEN YG, CHEN JY, ZHANG L, SUN XN, ZHAO Y, GUO YL, YU G, LIU YQ

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

ADVANCED MATERIALS

PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS

Solid-State Electrolyte-Gated Graphene in Optical Modulators

ADVANCED MATERIALS

RODRIGUEZ FJ, AZNAKAYEVA DE, MARSHALL OP, KRAVETS VG, GRIGORENKO AN

Highly Transparent and Stretchable Field-Effect Transistor Sensors Using Graphene-Nanowire Hybrid Nanostructures

ADVANCED MATERIALS

KIM J, LEE MS, JEON S, KIM M, KIM S, KIM K, BIEN F, HONG SY, PARK JU

Graphene-Based Microwave Circuits: A Review

ADVANCED MATERIALS

SAEED M, PALACIOS P, WEI MD, BASKENT E, FAN CY, UZLU B, WANG KT, HEMMETTER A, WANG ZX, NEUMAIER D, LEMME MC, NEGRA R