国家/地区 Usa（4） China（3） Germany（2） Korea（2）
关键词 FIELDEFFECT TRANSISTOR（13）
出版物 NANO LETTERS（13）
出版时间 2010（3） 2011（2） 2014（2） 2015（2） 2016（2）
机构
作者 LEE J（2）

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

NANO LETTERS

YU LL, LEE YH, LING X, SANTOS EJG, SHIN YC, LIN YX, DUBEY M, KAXIRAS E, KONG J, WANG H, PALACIOS T

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

NANO LETTERS

CHUANG HJ, TAN XB, GHIMIRE NJ, PERERA MM, CHAMLAGAIN B, CHENG MMC, YAN JQ, MANDRUS D, TOMANEK D, ZHOU ZX

Enhancement of the Electrical Properties of Graphene Grown by Chemical Vapor Deposition via Controlling the Effects of Polymer Residue

NANO LETTERS

SUK JW, LEE WH, LEE J, CHOU H, PINER RD, HAO YF, AKINWANDE D, RUOFF RS

Flow Sensing of Single Cell by Graphene Transistor in a Microfluidic Channel

NANO LETTERS

ANG PK, LI A, JAISWAL M, WANG Y, HOU HW, THONG JTL, LIM CT, LOH KP

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

NANO LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H

Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field

NANO LETTERS

MIYAZAKI H, TSUKAGOSHI K, KANDA A, OTANI M, OKADA S

Graphene and Nanowire Transistors for Cellular Interfaces and Electrical Recording

NANO LETTERS

COHENKARNI T, QING Q, LI Q, FANG Y, LIEBER CM

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

NANO LETTERS

XIA FN, FARMER DB, LIN YM, AVOURIS P

Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale

NANO LETTERS

JEONG SJ, JO S, LEE J, YANG K, LEE H, LEE CS, PARK H, PARK S

Electrolyte-Gated Graphene Ambipolar Frequency Multipliers for Biochemical Sensing

NANO LETTERS

FU WY, FENG LY, MAYER D, PANAITOV G, KIREEV D, OFFENHAUSSER A, KRAUSE HJ