国家/地区 India（2）
关键词 FLASH MEMORY（7）
出版物 ORGANIC ELECTRONICS（2）
出版时间 2017（2）
机构
作者

Tunable and nonvolatile multibit data storage memory based on MoTe2/boron nitride/graphene heterostructures through contact engineering

NANOTECHNOLOGY

WU EX, XIE Y, WANG SJ, WU C, ZHANG DH, HU XD, LIU J

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

IEEE ELECTRON DEVICE LETTERS

MISHRA A, JANARDANAN A, KHARE M, KALITA H, KOTTANTHARAYIL A

Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/pe-Si/Au based hybrid gate stack for non volatile memory applications

ORGANIC ELECTRONICS

SONI M, SONI A, SHARMA SK

N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate

ORGANIC ELECTRONICS

HAFSI B, BOUBAKER A, GUERIN D, LENFANT S, KALBOUSSI A, LMIMOUNI K

Origin of hole and electron traps in graphene oxide

MATERIALS RESEARCH EXPRESS

KOTIN IA, ANTONOVA IV, ORLOV OM, SMAGULOVA SA

Surface Engineering of Reduced Graphene Oxide for Controllable Ambipolar Flash Memories

ACS APPLIED MATERIALS INTERFACES

HAN ST, ZHOU Y, SONAR P, WEI HX, ZHOU L, YAN Y, LEE CS, ROY VAL

Graphene Photo Memtransistor Based on CMOS Flash Memory Technology with Neuromorphic Applications

ACS PHOTONICS

FRYDENDAHL C, INDUKURI SRKC, GRAJOWER M, MAZURSKI N, SHAPPIR J, LEVY U