国家/地区 Russia（2）
关键词 GRAPHENE（4）
出版物 SEMICONDUCTORS（2）
出版时间
机构 RUSSIAN ACAD.（2）
作者 KHANIN YN（4）

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

SEMICONDUCTORS

GRIGORIEV MV, GHAZARYAN DA, VDOVIN EE, KHANIN YN, MOROZOV SV, NOVOSELOV KS

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

SEMICONDUCTORS

KHANIN YN, VDOVIN EE, MISHCHENKO A, NOVOSELOV KS

ENHANCEMENT OF REDUCED GRAPHENE OXIDE BOLOMETRIC PHOTORESPONSE VIA ADDITION OF GRAPHENE QUANTUM DOTS

SURFACE REVIEW LETTERS

LAI S, CHEN M, KHANIN YN, NOVOSELOV KS, ANDREEVA DV

Graphene FETs with high and low mobilities have universal temperature-dependent properties

NANOTECHNOLOGY

GOSLING JH, MOROZOV SV, VDOVIN EE, GREENAWAY MT, KHANIN YN, KUDRYNSKYI Z, PATANE A, EAVES L, TURYANSKA L, FROMHOLD TM, MAKAROVSKY O