国家/地区 Usa（15）
关键词 GRAPHENE（15）
出版物 NANO LETTERS（6） ACS NANO（3） APPLIED PHYSICS LET.（3）
出版时间 2011（3） 2012（2） 2014（2） 2015（2） 2017（2）
机构 UNIV TEXAS A.（14）
作者 TUTUC E（15）

Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

ACS NANO

CORBET CM, MCCLELLAN C, KIM K, SONDE S, TUTUC E, BANERJEE SK

Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures

NANO LETTERS

LARENTIS S, TOLSMA JR, FALLAHAZAD B, DILLEN DC, KIM K, MACDONALD AH, TUTUC E

Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

LEE K, FALLAHAZAD B, MIN H, TUTUC E

Coulomb drag and magnetotransport in graphene double layers

SOLID STATE COMMUNICATIONS

KIM S, TUTUC E

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS NANO

RAMON ME, GUPTA A, CORBET C, FERRER DA, MOVVA HCP, CARPENTER G, COLOMBO L, BOURIANOFF G, DOCZY M, AKINWANDE D, TUTUC E, BANERJEE SK

Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

NANO LETTERS

LEE K, KIM S, POINTS MS, BEECHEM TE, OHTA T, TUTUC E

Low-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene

NANO LETTERS

JO I, HSU IK, LEE YJ, SADEGHI MM, KIM S, CRONIN S, TUTUC E, BANERJEE SK, YAO Z, SHI L

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK