国家/地区 China（12）
关键词 GRAPHENE（12）
出版物 JOURNAL OF ELECTRON.（4） MATERIALS LETTERS（4） ADVANCED ELECTRONIC.（2）
出版时间 2018（3） 2015（2） 2016（2） 2019（2）
机构 CHINESE ACAD SCI（12）
作者 YU GH（12）

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

Re-nucleation and Etching of Graphene During the Cooling Stage of Chemical Vapor Deposition

JOURNAL OF ELECTRONIC MATERIALS

LIANG YJ, ZHANG YH, CHEN ZY, GE XM, HU SK, LI J, SUI YP, YU GH

Thermal-assisted direct transfer of graphene onto flexible substrates

MATERIALS LETTERS

CHEN ZY, ZHANG YH, GE XM, SUI YP, LIANG YJ, HU SK, LI J, YU GH

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

NANOPHOTONICS

HE T, ZHAO YK, ZHANG XD, LIN WK, FU K, SUN C, SHI FF, DING XY, YU GH, ZHANG K, LU SL, ZHANG XP, ZHANG BS

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Effect of Cu substrate roughness on growth of graphene domains at atmospheric pressure

MATERIALS LETTERS

WANG B, ZHANG HR, ZHANG YH, CHEN ZY, JIN Z, LIU XY, HU LZ, YU GH

High quality graphene grown on single-crystal Mo(110) thin films

MATERIALS LETTERS

WANG B, ZHANG YH, CHEN ZY, WU YW, JIN Z, LIU XY, HU LZ, YU GH

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Effects of Cu substrate surface fluctuations on graphene during transfer

MATERIALS LETTERS

GE XM, ZHANG YH, CHEN ZY, ZHANG HR, HE L, SUI YP, DENG RX, YU GH

Enhancement of the Electrical Properties of CVD-Grown Graphene with Ascorbic Acid Treatment

JOURNAL OF ELECTRONIC MATERIALS

TANG CM, CHEN ZY, ZHANG HR, ZHANG YQ, ZHANG YH, SUI YP, YU GH, CAO YJ