国家/地区 China（18）
关键词 GRAPHENE（18）
出版物 ACTA PHYSICA SINICA（3）
出版时间 2018（5） 2017（3） 2013（2） 2021（2） 2022（2）
机构 HEBEI SEMICO.（6） CHINESE ACAD.（3）
作者 FENG ZH（18）

Structures, properties, and applications of CNT-graphene heterostructures

2D MATERIALS

DU W, AHMED Z, WANG Q, YU C, FENG ZH, LI GY, ZHANG M, ZHOU CJ, SENEGOR R, YANG CY

A Graphene-Based Terahertz Hot Electron Bolometer with Johnson Noise Readout

JOURNAL OF LOW TEMPERATURE PHYSICS

MIAO W, GAO H, WANG Z, ZHANG W, REN Y, ZHOU KM, SHI SC, YU C, HE ZZ, LIU QB, FENG ZH

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

High-Contrast SEM Imaging of Supported Few-Layer Graphene for Differentiating Distinct Layers and Resolving Fine Features: There is Plenty of Room at the Bottom

SMALL

HUANG L, ZHANG D, ZHANG FH, FENG ZH, HUANG YD, GAN Y

Fabrication of covalently linked graphene-mediated [FeFe]-hydrogenases biomimetic photocatalytic hydrogen evolution system in aqueous solution

APPLIED CATALYSIS BENVIRONMENTAL

LI RX, REN XT, TANG MY, CHEN MX, HUANG GB, FANG CH, LIU T, FENG ZH, YIN YB, GUO YM, MEI SK, YAN J

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

The second-order combination Raman modes of bilayer graphene in the range of 1800-2150 cm(-1)

ACTA PHYSICA SINICA

LI QQ, ZHANG X, WU JB, LU Y, TAN PH, FENG ZH, LI J, WEI C, LIU QB

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Effect of cooling of electron-hole plasma in electrically pumped graphene layer structures with split gates

ACTA PHYSICA SINICA

ZHANG YP, LIU LY, CHEN Q, FENG ZH, WANG JL, ZHANG X, ZHANG HY, ZHANG HY

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ