国家/地区 Japan（7）
关键词 GRAPHENE（7）
出版物 SOLIDSTATE ELECTRON.（3） PROCEEDINGS OF THE .（2）
出版时间 2010（2） 2013（2）
机构 TOHOKU UNIV（7）
作者 SUEMITSU T（7）

Site-Selective Epitaxy of Graphene on Si Wafers

PROCEEDINGS OF THE IEEE

FUKIDOME H, KAWAI Y, HANDA H, HIBINO H, MIYASHITA H, KOTSUGI M, OHKOCHI T, JUNG MH, SUEMITSU T, KINOSHITA T, OTSUJI T, SUEMITSU M

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

PROCEEDINGS OF THE IEEE

JUNG MH, PARK GH, YOSHIDA T, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Carbonaceous field effect transistor with graphene and diamondlike carbon

DIAMOND RELATED MATERIALS

TAKABAYASHI S, OGAWA S, TAKAKUWA Y, KANG HC, TAKAHASHI R, FUKIDOME H, SUEMITSU M, SUEMITSU T, OTSUJI T

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

JOURNAL OF LIGHTWAVE TECHNOLOGY

SUGAWARA K, KAWASAKI T, TAMAMUSHI G, MASTURA H, DOBROIU A, YOSHIDA T, SUEMITSU T, FUKIDOME H, SUEMITSU M, RYZHII V, IWATSUKI K, KUWANO S, KANI JI, TERADA J, OTSUJI T

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band

SOLIDSTATE ELECTRONICS

KAWASAKI T, SUGAWARA K, DOBROIU A, ETO T, KURITA Y, KOJIMA K, YABE Y, SUGIYAMA H, WATANABE T, SUEMITSU T, RYZHII V, IWATSUKI K, FUKADA Y, KANI J, TERADA J, YOSHIMOTO N, KAWAHARA K, AGO H, OTSUJI T