国家/地区 Switzerland（10）
关键词 GRAPHENE（10）
出版物 APPLIED PHYSICS LET.（3） PHYSICA STATUS SOLI.（2）
出版时间 2009（3） 2012（2） 2016（2） 2017（2）
机构 ETH（6） SWISS FED IN.（4）
作者 IHN T（10）

Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate

APPLIED PHYSICS LETTERS

BISCHOFF D, KRAHENMANN T, DROSCHER S, GRUNER MA, BARRAUD C, IHN T, ENSSLIN K

Electronic transport in graphene nanostructures on SiO2

SOLID STATE COMMUNICATIONS

IHN T, DROSCHER S, SCHNEZ S, KNOWLES H, GUTTINGER J, HUEFNER M, STAMPFER C, MEIR Y, ENSSLIN K

Quantum capacitance and density of states of graphene

APPLIED PHYSICS LETTERS

DROSCHER S, ROULLEAU P, MOLITOR F, STUDERUS P, STAMPFER C, ENSSLIN K, IHN T

Transport through graphene double dots

APPLIED PHYSICS LETTERS

MOLITOR F, DROSCHER S, GUTTINGER J, JACOBSEN A, STAMPFER C, IHN T, ENSSLIN K

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

STAMPFER C, SCHURTENBERGER E, MOLITOR F, GUTTINGER J, IHN T, ENSSLIN K

Transport gap in side-gated graphene constrictions

PHYSICAL REVIEW B

MOLITOR F, JACOBSEN A, STAMPFER C, GUTTINGER J, IHN T, ENSSLIN K

Anomalous Coulomb drag between bilayer graphene and a GaAs electron gas

NEW JOURNAL OF PHYSICS

SIMONET P, HENNEL S, OVERWEG H, STEINACHER R, EICH M, PISONI R, LEE Y, MARKI P, IHN T, ENSSLIN K, BECK M, FAIST J

Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

NANO LETTERS

OVERWEG H, EGGIMANN H, LIU MH, VARLET A, EICH M, SIMONET P, LEE YJ, WATANABE K, TANIGUCHI T, RICHTER K, FAL KO VI, ENSSLIN K, IHN T

Band gap and broken chirality in single-layer and bilayer graphene

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

VARLET A, LIU MH, BISCHOFF D, SIMONET P, TANIGUCHI T, WATANABE K, RICHTER K, IHN T, ENSSLIN K

The importance of edges in reactive ion etched graphene nanodevices

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

BISCHOFF D, SIMONET P, VARLET A, OVERWEG HC, EICH M, IHN T, ENSSLIN K