国家/地区 China（6）
关键词 GRAPHENE（6）
出版物
出版时间 2018（2）
机构 HEBEI SEMICOND RES INST（6）
作者 FENG ZH（6） LIU QB（6） YU C（5） HE ZZ（4）
LI J（4） CAI SJ（3） DUN SB（2） GAO XD（2）
LU WL（2） WANG JJ（2）

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ

Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene

ACTA PHYSICA SINICA

WANG B, FANG YL, YIN JY, LIU QB, ZHANG ZR, GUO YM, LI J, LU WL, FENG ZH

Epitaxial Graphene on Sapphire Substrate by Chemical Vapor Deposition

ACTA PHYSICOCHIMICA SINICA

LIU QB, YU C, HE ZZ, WANG JJ, LI J, LU WL, FENG ZH