国家/地区 Usa（3） Italy（2） Korea（2） Sweden（2）
关键词 GRAPHENE（13）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（13）
出版时间 2014（13）
机构
作者 VAZIRI S（2）

Graphene-Based Heat Spreader for Flexible Electronic Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES

BAE SH, SHABANI R, LEE JB, BAECK SJ, CHO HJ, AHN JH

A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

IEEE TRANSACTIONS ON ELECTRON DEVICES

BHATTACHARYA S, SAHA D, BID A, MAHAPATRA S

Tri-Gate Graphene Nanoribbon Transistors With Transverse-Field Bandgap Modulation

IEEE TRANSACTIONS ON ELECTRON DEVICES

TUNG LT, MATEUS MV, KAN EC

Graphene as a Diffusion Barrier in Galinstan-Solid Metal Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

AHLBERG P, JEONG SH, JIAO MZ, WU ZG, JANSSON U, ZHANG SL, ZHANG ZB

Simulation of DC and RF Performance of the Graphene Base Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, PALESTRI P, ESSENI D, VAZIRI S, SELMI L

Pulse Field Emission Characteristics of Vertical Few-Layer Graphene Cold Cathode

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHANG Y, DENG DL, ZHU LJ, DENG SZ, CHEN J, XU NS

On the Electrostatic Discharge Robustness of Graphene

IEEE TRANSACTIONS ON ELECTRON DEVICES

LI H, RUSS CC, LIU W, JOHNSSON D, GOSSNER H, BANERJEE K

Chiral Tunneling-Assisted Over-Barrier Electron Emission from Graphene

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIANG SJ, ANG LK

Barrier Height at the Graphene and Carbon Nanotube Junction

IEEE TRANSACTIONS ON ELECTRON DEVICES

KIM TG, KIM UJ, LEE SY, LEE YH, YU YS, HWANG SW, KIM S

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

CARRION EA, SEROV AY, ISLAM S, BEHNAM A, MALIK A, XIONG F, BIANCHI M, SORDAN R, POP E