国家/地区 France（3） China（2） India（2）
关键词 GRAPHENE（10）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（10）
出版时间 2015（10）
机构 UNIV BORDEAU.（2）
作者 FREGONESE S（2） ZIMMER T（2）

Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHATGE M, SHRIVASTAVA M

Resistance-Based Approach for Drain Current Modeling in Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

JAIN S, DUTTA AK

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, MANEUX C, ZIMMER T

Substrate-Induced Photofield Effect in Graphene Phototransistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BUTT NZ, SARKER BK, CHEN YP, ALAM MA

Modeling and Simulation of Graphene-Gated Graphene-GaAs Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHEN WC, LI XQ, YIN WY, LIN SS, ZHAO ZG, LI EP, ZHOU HJ

Graphene Field-Effect Transistor Model With Improved Carrier Mobility Analysis

IEEE TRANSACTIONS ON ELECTRON DEVICES

TIAN J, KATSOUNAROS A, SMITH D, HAO Y

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H

Graphene GaN-Based Schottky Ultraviolet Detectors

IEEE TRANSACTIONS ON ELECTRON DEVICES

XU K, XU C, XIE YY, DENG J, ZHU YX, GUO WL, XUN M, TEO KBK, CHEN HD, SUN J

Graphene Transistor-Based Active Balun Architectures

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZIMMER T, FREGONESE S

Noise Modeling of Graphene Resonant Channel Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LEKAS M, LEE S, CHA W, HONE J, SHEPARD K