国家/地区 Korea（2）
关键词 GRAPHENE DEVICE（6）
出版物
出版时间 2016（6）
机构
作者

Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance

IET CIRCUITS DEVICES SYSTEMS

KAUR J, KUMARI A

A general method of fabricating free-standing, monolayer graphene electronic device and its property characterization

SENSORS ACTUATORS APHYSICAL

WANG HD, KURATA K, FUKUNAGA T, AGO H, TAKAMATSU H, ZHANG X, IKUTA T, TAKAHASHI K, NISHIYAMA T, TAKATA Y

Bistable memory and logic-gate devices fabricated by intercrossed stacking of graphene-ferroelectric hybrid ribbons

MICRO NANO LETTERS

KIM WY, KIM HD, JEON GJ, KANG IK, SHIM HB, KIM TH, LEE HC

Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene

NANO LETTERS

MONTANARO A, MZALI S, MAZELLIER JP, BEZENCENET O, LARAT C, MOLIN S, MORVAN L, LEGAGNEUX P, DOLFI D, DLUBAK B, SENEOR P, MARTIN MB, HOFMANN S, ROBERTSON J, CENTENO A, ZURUTUZA A

Improving graphene non-volatile memory using self-aligned gate

ELECTRONICS LETTERS

LEE K, KIM O

Bottom-up realization and electrical characterization of a graphene-based device

NANOTECHNOLOGY

MAFFUCCI A, MICCIULLA F, CATALDO A, MIANO G, BELLUCCI S