国家/地区 China（3）
关键词 GRAPHENE TRANSISTOR（8）
出版物
出版时间 2020（8）
机构 HEFEI UNIV T.（2）
作者 BI YL（2） GAO SJ（2） QU H（2） WANG RR（2）
ZHENG L（2）

An investigation to determine the interface condition between graphene and aluminum oxide

JAPANESE JOURNAL OF APPLIED PHYSICS

TATENO Y, MITSUHASHI F, ADACHI M, YONEMURA T, SAITO Y, YAMAMOTO Y, NAKABAYASHI T

Contact resistance extraction of graphene FET technologies based on individual device characterization

SOLIDSTATE ELECTRONICS

PACHECOSANCHEZ A, FEIJOO PC, JIMENEZ D

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

Terahertz Laser Combs in Graphene Field-Effect Transistors

ACS PHOTONICS

COSME P, TERCAS H

Mobility improvement in CVD graphene by using local metal side-gate

SEMICONDUCTOR SCIENCE TECHNOLOGY

ACHARYA S, BABU AV, KHADAR RA, KOTTANTHARAYIL A

Identification of frozen/thawed beef based on label-free detection of hemin (Iron Porphyrin) with solution-gated graphene transistor sensors

SENSORS ACTUATORS BCHEMICAL

GAO SJ, WANG RR, BI YL, QU H, CHEN Y, ZHENG L

Single-Atom Enzyme-Functionalized Solution-Gated Graphene Transistor for Real-Time Detection of Mercury Ion

ACS APPLIED MATERIALS INTERFACES

YAO LL, GAO SJ, LIU S, BI YL, WANG RR, QU H, WU YE, MAO Y, ZHENG L

High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

APPLIED SCIENCESBASEL

WILMART Q, BOUKHICHA M, GRAEF H, MELE D, PALOMO J, ROSTICHER M, TANIGUCHI T, WATANABE K, BOUCHIAT V, BAUDIN E, BERROIR JM, BOCQUILLON E, FEVE G, PALLECCHI E, PLACAIS B