国家/地区 China（3） Iran（2） Italy（2）
关键词 GRAPHENEBASED DEVICE（13）
出版物 IET CIRCUITS DEVICE.（2）
出版时间 2017（5） 2019（2）
机构
作者

Terahertz multi-plasmon induced reflection and transmission and sensor devices in a graphene-based coupled nanoribbons resonators

OPTICS COMMUNICATIONS

NOUAL A, AMRANI M, EL BOUDOUTI EH, PENNEC Y, DJAFARIROUHANI B

Numerical modeling of nonlinear graphene-based devices at terahertz frequencies

INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS MECHANICS

MAKEEVA G, GOLOVANOV O, RINKEVICH A

Vertical Graphene Tunneling Heterostructure with Ultrathin Ferroelectric BaTiO3 Film as a Tunnel Barrier

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

CHAN HL, YUAN SG, HAO JH

Adsorption and desorption of fullerene on graphene/SiC(0001)

SURFACE SCIENCE

JEE HG, HAN JH, HWANG HN, KIM YD, HWANG CC

Schottky-barrier graphene nanoribbon field-effect transistors-based field-programmable gate array's configurable logic block and routing switch

IET CIRCUITS DEVICES SYSTEMS

KASHANI SAS, ALIDASH HK, MIRYALA S

Multimaterial 3D Printing of Graphene-Based Electrodes for Electrochemical Energy Storage Using Thermoresponsive Inks

ACS APPLIED MATERIALS INTERFACES

ROCHA VG, GARCIATUNON E, BOTAS C, MARKOULIDIS F, FEILDEN E, D ELIA E, NI N, SHAFFER M, SAIZ E

Photon-assisted transport through a 1D-dot-graphene similar to STM model device

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

ZHAO ZY, MIN Y, ZHOU PX, HUANG YY, ZHONG CG

Tunable midinfrared wavelength selective structures based on resonator with antisymmetric parallel graphene pair

OPTICAL ENGINEERING

ASGARI S, DOLATABADY A, GRANPAYEH N

Graphene Base Transistors With Bilayer Tunnel Barriers: Performance Evaluation and Design Guidelines

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, VAZIRI S, PALESTRI P, SELMI L

Review on graphene nanoribbon devices for logic applications

MICROELECTRONICS JOURNAL

MARMOLEJOTEJADA JM, VELASCOMEDINA J