国家/地区 Japan（4）
关键词 GROWTH MODEL（7）
出版物 JOURNAL OF CRYSTAL .（5）
出版时间 2021（2）
机构
作者 FUJIKAWA S（2） MARUYAMA T（2） NARITSUKA S（2） SASAKI T（2）
TAKAHASI M（2） UEDA Y（2） YAMADA J（2）

X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

JOURNAL OF CRYSTAL GROWTH

NARITSUKA S, YAMADA J, UEDA Y, NAKASHIMA A, KASHIO T, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M

Graphene films grown at low substrate temperature and the growth model by using MBE technique

JOURNAL OF CRYSTAL GROWTH

LIN MY, GUO WC, WU MH, WANG PY, LEE SC, LIN SY

Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (0 0 0-1): A study of ridge structures formation dynamics associated with temperature

JOURNAL OF CRYSTAL GROWTH

USHIO S, YOSHII A, TAMAI N, OHTANI N, KANEKO T

Growth Model of van der Waals Epitaxy of Films: A Case of AIN Films on Multilayer Graphene/SiC

ACS APPLIED MATERIALS INTERFACES

XU Y, CAO B, LI ZY, CAI DM, ZHANG YM, REN GQ, WANG JF, SHI L, WANG CH, XU K

Helical superstructure of continuum graphene cone uncovered by TEM analysis of herringbone-striped pattern in graphitic whiskers

JOURNAL OF CRYSTAL GROWTH

SAITO Y, NISHIOHAMANE D

Predicting Graphene Growth on Cu: Universal Kinetic Growth Model and Its Experimental Verification

ACS NANO

LEIDINGER P, KRAUS J, GUNTHER S

Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer

JOURNAL OF CRYSTAL GROWTH

YAMADA J, UEDA Y, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M, NARITSUKA S