国家/地区 Korea（2） Usa（2）
关键词 HBN（9）
出版物 2D MATERIALS（3） NANO LETTERS（3）
出版时间 2022（3） 2017（2）
机构
作者 WATANABE K（9）

Cyclotron Resonance Study of Monolayer Graphene under Double Moire Potentials

NANO LETTERS

ONODERA M, KINOSHITA K, MORIYA R, MASUBUCHI S, WATANABE K, TANIGUCHI T, MACHIDA T

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

2D MATERIALS

MANIA E, ALENCAR AB, CADORE AR, CARVALHO BR, WATANABE K, TANIGUCHI T, NEVES BRA, CHACHAM H, CAMPOS LC

Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons

CARBON

NANDA G, HLAWACEK G, GOSWAMI S, WATANABE K, TANIGUCHI T, ALKEMADE PFA

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions

NANO LETTERS

CHANDNI U, WATANABE K, TANIGUCHI T, EISENSTEIN JP

Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts

NANO LETTERS

GUAROCHICOMOREIRA VH, SAMBRICIO JL, OMARI K, ANDERSON CR, BANDURIN DA, TOSCANOFIGUEROA JC, NATERACORDERO N, WATANABE K, TANIGUCHI T, GRIGORIEVA IV, VERAMARUN IJ

Phonon Lifetimes in Boron-Isotope-Enriched Graphene- Hexagonal Boron Nitride Devices

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

BRASINGTON A, LIU S, TANIGUCHI T, WATANABE K, EDGAR JH, LEROY BJ, SANDHU A

UV light controlled optoelectronic memory based on WSe2 and hBN encapsulated graphene heterostructures

JOURNAL OF ALLOYS COMPOUNDS

KIM M, LEE Y, KUMAR S, KANG D, LEE S, NGUYEN V, NGUYEN DC, JAFFERY SHA, JUNG JW, TANIGUCHI T, WATANABE K, SEO Y

Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

2D MATERIALS

CHEN WC, CHUANG C, WANG TH, YEH CC, CHEN SZ, SAKANASHI K, KIDA M, LIN LH, LEE PH, WU PC, WANG SW, WATANABE K, TANIGUCHI T, HSIEH YP, AOKI N, LIANG CT

Fast and accurate robotic optical detection of exfoliated graphene and hexagonal boron nitride by deep neural networks

2D MATERIALS

SHIN YJ, SHIN W, TANIGUCHI T, WATANABE K, KIM P, BAE SH