国家/地区 Usa（3）
关键词 HIGHK DIELECTRIC THIN FILM（5）
出版物 APPLIED PHYSICS LET.（4）
出版时间 2010（4）
机构
作者 COLOMBO L（2）

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

CENTRAL EUROPEAN JOURNAL OF PHYSICS

ALLES H, AARIK J, AIDLA A, FAY A, KOZLOVA J, NIILISK A, PARS M, RAHN M, WIESNER M, HAKONEN P, SAMMELSELG V

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene

APPLIED PHYSICS LETTERS

LAHIRI J, BATZILL M

In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

APPLIED PHYSICS LETTERS

CHEN Q, HUANG H, CHEN W, WEE ATS, FENG YP, CHAI JW, ZHANG Z, PAN JS, WANG SJ