国家/地区 China（7）
关键词 MEMORY DEVICE（7）
出版物
出版时间 2012（3） 2019（2）
机构
作者

Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

NANOMATERIALS

WANG L, WANG JY, WEN DZ

Improved Resistive Memory Based on ZnO-Graphene Hybrids through Redox Process of Graphene Quantum Dots

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

CHEN T, GAO YJ, CHEN W, ZHAO X

Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices

CARBOHYDRATE POLYMERS

LIU T, WU W, LIAO KN, SUN QJ, GONG XJ, ROY VAL, YU ZZ, LI RKY

Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device

IEEE ELECTRON DEVICE LETTERS

SHI KX, WANG ZQ, XU HY, XU Z, ZHANG XH, ZHAO XN, LIU WZ, YANG GC, LIU YC

Nonvolatile memory devices based on electrical conductance tuning in poly(N-vinylcarbazole)-graphene composites

ORGANIC ELECTRONICS

ZHANG Q, PAN J, YI X, LI L, SHANG SM

Graphene/Metal Contacts: Bistable States and Novel Memory Devices

ADVANCED MATERIALS

WANG XM, XIE WG, DU J, WANG CL, ZHAO N, XU JB

Chemoselective Photodeoxidization of Graphene Oxide Using Sterically Hindered Amines as Catalyst: Synthesis and Applications

ACS NANO

ZHAO F, LIU JQ, HUANG X, ZOU X, LU G, SUN PJ, WU SX, AI W, YI MD, QI XY, XIE LH, WANG JL, ZHANG H, HUANG W