国家/地区
关键词 MOBILITY（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（2）
出版时间 2018（2）
机构
作者

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC