国家/地区 China（2） Russia（2）
关键词 MOLECULAR BEAM EPITAXY（8）
出版物
出版时间 2022（8）
机构
作者

Defect seeded remote epitaxy of GaAs films on graphene

NANOTECHNOLOGY

ZULQURNAIN M, BURTON OJ, ALHADA M, GOFF LE, HOFMANN S, HIRST LC

Photodetector Arrays Based on MBE-Grown GaSe/Graphene Heterostructure

ADVANCED OPTICAL MATERIALS

SAROJ RK, GUHA P, LEE S, YOO D, LEE E, LEE J, KIM M, YI GC

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis

NANOMATERIALS

LOZOVOY KA, IZHNIN II, KOKHANENKO AP, DIRKO VV, VINARSKIY VP, VOITSEKHOVSKII AV, FITSYCH OI, AKIMENKO NY

Improved epitaxy of ZnO films by regulating the layers of graphene

APPLIED SURFACE SCIENCE

WANG N, WANG P, WANG FZ, HE HP, HUANG JY, PAN XH, ZHU GM, WANG JB, YE ZZ

van der Waals growth of PbSe thin films on graphene and Bi2Se3

VACUUM

REN YX, WEI M, WANG SJ, LIU XZ

Remote epitaxy of In(x)Ga1-As-x (001) on graphene covered GaAs (001) substrates

JOURNAL OF CRYSTAL GROWTH

HENKSMEIER T, SCHULZ JF, KLUTH E, FENEBERG M, GOLDHAHN R, SANCHEZ AM, VOIGT M, GRUNDMEIER G, REUTER D

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

ACS NANO

BEN JABRA Z, ABEL M, FABBRI F, AQUA JN, KOUDIA M, MICHON A, CASTRUCCI P, RONDA A, VACH H, DE CRESCENZI M, BERBEZIER I

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

APPLIED SCIENCESBASEL

BORISENKO DP, GUSEV AS, KARGIN NI, DOBROKHOTOV PL, TIMOFEEV AA, LABUNOV VA, MIKHALIK MM, KATIN KP, MASLOV MM, DZHUMAEV PS, KOMISSAROV IV