国家/地区 China（2）
关键词 MOTE2（4）
出版物 NANOTECHNOLOGY（2）
出版时间 2020（4）
机构
作者

Tunable and nonvolatile multibit data storage memory based on MoTe2/boron nitride/graphene heterostructures through contact engineering

NANOTECHNOLOGY

WU EX, XIE Y, WANG SJ, WU C, ZHANG DH, HU XD, LIU J

Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

SCIENCE CHINAINFORMATION SCIENCES

WANG C, PAN C, LIANG SJ, CHENG B, MIAO F

Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating

ACS APPLIED MATERIALS INTERFACES

KIM HJ, LEE KJ, PARK J, SHIN GH, PARK H, YU K, CHOI SY

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe2 on graphene/6H-SiC(0001) by molecular beam epitaxy

NANOTECHNOLOGY

CASTELINO R, PHAM TT, FELTEN A, SPORKEN R