国家/地区 Usa（5） China（3）
关键词 NANOELECTRONIC（13）
出版物 APPLIED PHYSICS LET.（5） JOURNAL OF APPLIED .（2）
出版时间 2009（13）
机构 UNIV SCI TE.（2）
作者

A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block

NANOSCALE RESEARCH LETTERS

LEE SW, LEE SS, YANG EH

A Tunable Quantum-Dot Device Based on Cross-Bar Graphene Nanoribbon Structures

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

WANG ZF, SHI QW, CHEN J

Spin Gapless Semiconductor-Metal-Half-Metal Properties in Nitrogen-Doped Zigzag Graphene Nanoribbons

ACS NANO

LI YF, ZHOU Z, SHEN PW, CHEN ZF

Effects of nonmagnetic impurities on the spin transport property of a graphene nanoribbon device

JOURNAL OF CHEMICAL PHYSICS

PARK J, YANG H, PARK KS, LEE EK

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample orientation

PHYSICAL REVIEW B

MOHIUDDIN TMG, LOMBARDO A, NAIR RR, BONETTI A, SAVINI G, JALIL R, BONINI N, BASKO DM, GALIOTIS C, MARZARI N, NOVOSELOV KS, GEIM AK, FERRARI AC

Graphene nanoribbon as a negative differential resistance device

APPLIED PHYSICS LETTERS

REN H, LI QX, LUO Y, YANG JL

Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study

JOURNAL OF APPLIED PHYSICS

TEONG H, LAM KT, KHALID SB, LIANG GC

Multilayer friction and attachment effects on energy dissipation in graphene nanoresonators

APPLIED PHYSICS LETTERS

KIM SY, PARK HS