国家/地区 Russia（2）
关键词 NITRIDE（4）
出版物 JOURNAL OF CRYSTAL GROWTH（4）
出版时间 2013（2）
机构
作者

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

JOURNAL OF CRYSTAL GROWTH

LUNDIN WV, ZAVARIN EE, SAKHAROV AV, ZAKHEIM DA, DAVYDOV VY, SMIRNOV AN, ELISEYEV IA, YAGOVKINA MA, BRUNKOV PN, LUNDINA EY, MARKOV LK, TSATSULNIKOV AF

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

JOURNAL OF CRYSTAL GROWTH

GUPTA P, RAHMAN AA, HATUI N, GOKHALE MR, DESHMUKH MM, BHATTACHARYA A

CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC

JOURNAL OF CRYSTAL GROWTH

HWANG J, KIM M, SHIELDS VB, SPENCER MG

Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

MANSUROV V, MALIN T, GALITSYN Y, ZHURAVLEV K