国家/地区 Usa（5）
关键词 NONEQUILIBRIUM GREEN S FUNCTION NEGF（5）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2011（2）
机构 PURDUE UNIV（2） UNIV FLORIDA（2）
作者

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

SUPERLATTICES MICROSTRUCTURES

SAREMI M, SAREMI M, NIAZI H, GOHARRIZI AY

Substrate Gating of Contact Resistance in Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BERDEBES D, LOW T, SUI Y, APPENZELLER J, LUNDSTROM MS

Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices

IEEE TRANSACTIONS ON NANOTECHNOLOGY

UNLUER D, TSENG F, GHOSH AW, STAN MR

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE TRANSACTIONS ON ELECTRON DEVICES

YOON Y, FIORI G, HONG S, IANNACCONE G, GUO J

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

CHEN FW, ILATIKHAMENEH H, KLIMECK G, CHEN ZH, RAHMAN R