国家/地区 Usa（3）
关键词 NONVOLATILE MEMORY（6）
出版物
出版时间 2012（6）
机构
作者 KIM SM（3） SONG EB（3） LEE S（2） SEO DH（2）
SEO S（2） WANG KL（2）

Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review

UKRAINIAN JOURNAL OF PHYSICAL OPTICS

STRIKHA MV

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

ORGANIC ELECTRONICS

PARK Y, GUPTA D, LEE C, HONG Y

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

NANO LETTERS

ZHANG H, BAO WZ, ZHAO Z, HUANG JW, STANDLEY B, LIU G, WANG FL, KRATZ P, JING L, BOCKRATH M, LAU CN