国家/地区 China（3） India（2） Korea（2）
关键词 RAMAN SPECTROSCOPY（10）
出版物 JOURNAL OF NANOSCIENCE NANOTECHNOLOGY（10）
出版时间 2013（2） 2016（2） 2019（2） 2020（2）
机构
作者

Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

RAMESH C, TYAGI P, BERA S, GAUTAM S, SUBHEDAR KM, KUMAR MS, KUSHVAHA SS

Investigation of Swift Heavy Ion Irradiated Reduced Graphene Oxide (rGO)/Molybdenum Disulfide (MoS2) Nanocomposite Using Raman Spectroscopy

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

SHAKYA J, KASANA PK, MOHANTY T

Probing the Performance of Glucose Oxidase Treated Graphene-Based Field Effect Transistors

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

SIDDIQUE S, MUKHTAR H

Fabrication of Uniform Gold Nanopatterns on Graphene by Using Nanosphere Lithography

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

SHAN YB, WANG QQ, TANG NY, HU LG, TIAN PF, CAO GQ, QIU ZJ, CONG CX

Effect of Si3N4 Thickness on the Optical Characterization of Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

SHIN DW, LEE JH, YOO JB

An Environmentally Friendly Approach to the Reduction of Graphene Oxide by Escherichia fergusoni

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

GURUNATHAN S, HAN JW, EPPAKAYALA V, JEYARAJ M, KIM JH

Fluorination of Edges and Central Areas of Monolayer Graphene by SF6 and CHF3 Plasma Treatments

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

CHEN MJ, QIU CY, ZHOU HQ, YANG HC, YU F, SUN LF

Raman Monitoring of Strain Induced Effects in Mechanically Deposited Single Layer Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

RUSSO P, COMPAGNINI G, MUSUMECI C, PIGNATARO B

Electrical Characteristics of Horizontally and Vertically Oriented Few-Layer Graphene on Si-Based Dielectrics

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

BEHURA SK, YANG QQ, HIROSE A, NAYAK S, JANI O, MUKHOPADHYAY I

Easy Preparation and Photoelectrochemical Properties of CdS Nanoparticle/Graphene Nanosheet Nanocomposites Using Supercritical Carbon Dioxide

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

YAN SC, XU X, JIANG C, PAN LJ, SHI Y, HU D, CAO ZL