国家/地区 Iran（3） China（2） England（2）
关键词 RECTIFIER（13）
出版物 IEEE TRANSACTIONS O.（2） JOURNAL OF ELECTRON.（2）
出版时间 2015（2） 2017（2） 2018（2） 2020（2） 2021（2）
机构 UNIV MANCHES.（3） ISLAMIC AZAD.（2）
作者 SONG AM（3） AUTON G（2） GOLZANI M（2） HAJINASIRI S（2）
HILL E（2）

Graphene ballistic rectifiers: Theory and geometry dependence

CARBON

BROWNLESS J, ZHANG JW, SONG AM

The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

GOLZANI M, POLIKI M, HAJINASIRI S

The Effect of Line-Edge Roughness on Electronic Transport Characteristics of a Graphene Nanoribbon Rectifier

JOURNAL OF ELECTRONIC MATERIALS

GOLZANI M, HAJINASIRI S

Intrinsic rectification in common-gated graphene field-effect transistors

NANO ENERGY

HADDAD PA, FLANDRE D, RASKIN JP

All-Graphene Planar Double Barrier Resonant Tunneling Diodes

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ALDIRINI F, HOSSAIN FM, NIRMALATHAS A, SKAFIDAS E

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers

NANO LETTERS

AUTON G, BUT DB, ZHANG J, HILL E, COQUILLAT D, CONSEJO C, NOUVEL P, KNAP W, VARANI L, TEPPE F, TORRES J, SONG AM

Graphene Triangular Ballistic Rectifier: Fabrication and Characterisation

JOURNAL OF ELECTRONIC MATERIALS

AUTON G, KUMAR RK, HILL E, SONG AM

Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons

JOURNAL OF COMPUTATIONAL ELECTRONICS

YAMACLI S

A graphene spin diode based on Rashba SOI

JOURNAL OF MAGNETISM MAGNETIC MATERIALS

MOHAMMADPOUR H

All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters

ACS NANO

KIM W, LI CF, CHEKUROV N, ARPIAINEN S, AKINWANDE D, LIPSANEN H, RIIKONEN J