国家/地区
关键词 RESISTIVE SWITCHING（5）
出版物
出版时间 2023（5）
机构
作者

Perforated Turbostratic Graphene As Active Layer in a Nonvolatile Resistive Switching Memory Device

ACS APPLIED ELECTRONIC MATERIALS

CHAKRABORTY N, GHOSH J, GOSWAMI S, SHAW A, DAS B, MALLIK A, CHATTOPADHYAY KK

Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer

SEMICONDUCTOR SCIENCE TECHNOLOGY

HU LF, ZHENG Z, XIAO M, MENG QS

EBIC Imaging of Conductive Paths Formed in Graphene Oxide as a Result of Resistive Switching

APPLIED SCIENCESBASEL

YAKIMOV EB, KOVESHNIKOV S, KONONENKO O

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

NANOMATERIALS

KAHRO T, RAUDONEN K, MERISALU J, TARRE A, RITSLAID P, KASIKOV A, JOGIAAS T, KAAMBRE T, OTSUS M, KOZLOVA J, ALLES H, TAMM A, KUKLI K

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

ACS APPLIED NANO MATERIALS

MOAZZENI A, MADVAR HR, HAMEDI S, KORDROSTAMI Z