国家/地区 Korea（5） China（2）
关键词 RESISTIVE SWITCHING MEMORY（8）
出版物 JOURNAL OF NANOSCIE.（2）
出版时间 2014（2） 2016（2） 2018（2）
机构 KOREA ADV IN.（2）
作者 CHOI SY（2）

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

ADVANCED MATERIALS

ZHAO XL, MA J, XIAO XH, LIU Q, SHAO L, CHEN D, LIU S, NIU JB, ZHANG XM, WANG Y, CAO RR, WANG W, DI ZF, LV HB, LONG SB, LIU M

Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

LIN JR, NI XY

Resistive switching in graphene/graphene oxide/ZnO heterostructures

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

KAPITANOVA OO, PANIN GN, KONONENKO OV, BARANOV AN, KANG TW

Impedance spectroscopy analysis of the switching mechanism of reduced graphene oxide resistive switching memory

SOLIDSTATE ELECTRONICS

HO NT, SENTHILKUMAR V, KIM YS

Flexible Resistive Switching Memory Device Based on Graphene Oxide

IEEE ELECTRON DEVICE LETTERS

HONG SK, KIM JE, KIM SO, CHOI SY, CHO BJ

Improvement of On/Off Ratio in Solution-Processed Graphene-Zinc Oxide Resistive Switching Memory by Blending with Polystyrene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM C, JOHRA FT, KIM J, LEE J, JUNG WG, LEE MJ

Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

2D MATERIALS

SHIN GH, KIM CK, BANG GS, KIM JY, JANG BC, KOO BJ, WOO MH, CHOI YK, CHOI SY

Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

CURRENT APPLIED PHYSICS

MIDYA A, GOGURLA N, RAY SK