国家/地区 Iran（3）
关键词 RESONANT TUNNELING DIODE（7）
出版物 JOURNAL OF COMPUTAT.（2） SEMICONDUCTOR SCIEN.（2）
出版时间 2021（3） 2019（2）
机构 SHAHID BEHES.（2）
作者

New RTDs with enhanced operation based on black phosphorus-graphene heterostructures and a semianalytical vdW tunneling model

JOURNAL OF COMPUTATIONAL ELECTRONICS

KHOSHBATEN M, HOSSEINI SE

Effects of uniaxial strain on the performance of armchair graphene nanoribbon resonant tunneling diode

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZOGHI M, KABIR MZ

Resonant Tunneling Diode by Means of Compound Armchair Boron/Nitride and Graphene Nanoribbons

JOURNAL OF ELECTRONIC MATERIALS

GOHARRIZI AY

Negative differential resistance in new structures based on graphene nanoribbons

JOURNAL OF COMPUTATIONAL ELECTRONICS

SHARIFI M, AKHOUNDI E, ESMAILI H

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

SEMICONDUCTOR SCIENCE TECHNOLOGY

HOSSAIN T, RAHAMAN MI, ALAM M

Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well

PHYSICA SCRIPTA

MISHRA M, DAS NR, SAHOO N, SAHU T

Fermi Velocity Modulation Induced Low-Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

ANNALEN DER PHYSIK

SATTARIESFAHLAN SM, ILATIKHAMENEH H, FOULADIOSKOUEI J