国家/地区 Tunisia（3）
关键词 SCATTERING RATE（9）
出版物 JOURNAL OF COMPUTAT.（2）
出版时间 2014（2） 2017（2）
机构 UNIV CARTHAG.（2）
作者 BOURGUIGA R（2） MAHDOUANI M（2）

Analytical Study of Carrier Generation Rate in Graphene Nanoscroll

PLASMONICS

AMIRI IS, MOHAMMADI H

The effect of Si impurities on the transport properties and the electron-surface phonon interaction in single layer graphene deposited on polar substrates

PHYSICA BCONDENSED MATTER

MAHDOUANI M, GARDELIS S, BOURGUIGA R

Terahertz Optoelectronic Property of Graphene: Substrate-Induced Effects on Plasmonic Characteristics

APPLIED SCIENCESBASEL

LIN IT, LAI YP, WU KH, LIU JM

Carrier scattering and impact ionization in bilayer graphene

JOURNAL OF COMPUTATIONAL ELECTRONICS

SAEIDMANESH M, GHADIRY MH, KHALEDIAN M, KIANI MJ, ISMAIL R

Probing Charged Impurities in Suspended Graphene Using Raman Spectroscopy

ACS NANO

NI ZH, YU T, LUO ZQ, WANG YY, LIU L, WONG CP, MIAO JM, HUANG W, SHEN ZX

Investigation of the electron-surface phonon interaction effects in graphene on a substrate made of polar materials

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

MAHDOUANI M

Auger and carrier-surface phonon interaction processes in graphene on a substrate made of polar materials

SUPERLATTICES MICROSTRUCTURES

MANDOUANI M, BOURGUIGA R

Experimental evidence of disorder enhanced electron-phonon scattering in graphene devices

CARBON

EVANGELI C, MCCANN E, SWETT JL, TEWARI S, BIAN XY, THOMAS JO, BRIGGS GAD, KOLOSOV OV, MOL JA

A compact model of the backscattering coefficient and mobility of a graphene FET for SiO2 and h-BN substrates

JOURNAL OF COMPUTATIONAL ELECTRONICS

UPADHYAY AK, GUPTA D, MATHEW R, BEOHAR A