国家/地区 China（8）
关键词 SCHOTTKY BARRIER（8）
出版物 APPLIED SURFACE SCI.（2）
出版时间 2020（8）
机构 HENAN NORMAL.（2）
作者

Contact barriers modulation of graphene/beta-Ga2O3 interface for high-performance Ga2O3 devices

APPLIED SURFACE SCIENCE

YUAN HD, SU J, GUO R, TIAN K, LIN ZH, ZHANG JC, CHANG JJ, HAO Y

Graphene/alpha-tellurene van der Waals heterobilayers: Interlayer coupling and gate-tunable carrier type and Schottky barriers

APPLIED SURFACE SCIENCE

LIU HR, GAO R, YANG J, YANG F, WANG TX, ZHANG ZX, LIU XG, JIA HS, XU BS, MA H

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe(2)van der Waals Heterostructure

NANOSCALE RESEARCH LETTERS

LAN Y, XIA LX, HUANG T, XU WP, HUANG GF, HU WY, HUANG WQ

External-strain induced transition from Schottky to ohmic contact in Graphene/InS and Graphene/Janus In2SSe heterostructures

JOURNAL OF SOLID STATE CHEMISTRY

ZHANG WX, SHI CH, HE C, BAI M

Performance of the Pentagonal PdSe2 Sheet as a Channel Material in Contact with Metal Surfaces and Graphene

ACS APPLIED ELECTRONIC MATERIALS

HASSAN A, GUO YG, WANG Q

Tunable Schottky barrier in InTe/graphene van der Waals heterostructure

NANOTECHNOLOGY

LI HH, ZHOU ZP, WANG HY

Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field

ACTA PHYSICA SINICA

ZHANG F, JIA LQ, SUN XT, DAI XQ, HUANG QX, LI W

Graphene-nanowalls/silicon hybrid heterojunction photodetectors

CARBON

WANG HC, FU YQ