国家/地区 Japan（3）
关键词 SCHOTTKY BARRIER（3）
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出版时间
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Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction

ACS APPLIED MATERIALS INTERFACES

TABATA H, SATO Y, OI K, KUBO O, KATAYAMA M

High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors

ADVANCED FUNCTIONAL MATERIALS

AJI AS, SOLISFERNANDEZ P, JI HG, FUKUDA K, AGO H

Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

JAPANESE JOURNAL OF APPLIED PHYSICS

NAKAGAWA Y, OKAUCHI S, SANO M, MUKAI T, OHNO Y, NAGASE M