国家/地区 China（15） Vietnam（10） Korea（4）
关键词 SCHOTTKY CONTACT（35）
出版物 DIAMOND RELATED MAT.（4） SUPERLATTICES MICRO.（4） APPLIED SURFACE SCI.（3）
JOURNAL OF PHYSICS .（3） JOURNAL OF ALLOYS C.（2）
出版时间 2018（9） 2023（6） 2022（5） 2016（4） 2019（4） 2020（3） 2021（3）
机构 LE QUY DON T.（7）
作者 NGUYEN CV（10） HIEU NN（8） PHUC HV（8） HOI BD（4）
AMIN B（3） ILYASOV VV（3） PHAM KD（3） PHUONG LTT（3）
DAI XQ（2） HIEU NV（2） LI YP（2） LI Z（2）
MA XG（2） XIA CX（2） ZHANG JH（2）

Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure

JOURNAL OF PHYSICSCONDENSED MATTER

DEUS DPD, DE OLIVEIRA ISS

Understanding the electronic properties, contact types and optical performances in graphene/InN heterostructure: Role of electric gating

DIAMOND RELATED MATERIALS

NGUYEN CV, DAO TP, THO TT, HOA L, HIEU NN, PHUC HV, IDREES M, AMIN B, LE PTT

Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr-ZnO Schottky contact by I-V-T

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

LI YP, LI YF, ZHANG JH

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

APPLIED SURFACE SCIENCE

KE WC, LIANG ZY, TESFAY ST, CHIANG CY, YANG CY, CHANG KJ, LIN JC

Interfacial interaction and Schottky contact of two-dimensional WS2/graphene heterostructure

ACTA PHYSICA SINICA

GUO LJ, HU JS, MA XG, XIANG J

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

ACS APPLIED MATERIALS INTERFACES

MUKHERJEE A, YUN H, SHIN DH, NAM J, MUNSHI AM, DHEERAJ DL, FIMLAND BO, WEMAN H, KIM KS, LEE SW, KIM DC

Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode

JOURNAL OF NANOPHOTONICS

SUN CZ, CAI WW, HONG RD, CAI JF, WU ZY

SnS nanoribbon graphene mixed-dimensional heterostructures: Group VII passivation and quantum size effects

JOURNAL OF ALLOYS COMPOUNDS

XIA CX, FANG LZ, LI XP, XIONG WQ, GENG ZD

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV